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hexfet power mosfet notes through are on page 9 features and benefits features benefits applications ? secondary side synchronous rectification ? inverters for dc motors ? dc-dc brick applications ? boost converters pqfn 5x6 mm low r dson lower conduction losses low thermal resistance to pcb ( 0. 100 0. ? multi-vendor compatibility compatible with existing surface mount techniques easier manufacturing rohs compliant containing no lead, no bromide and no halogen environmentally friendlier msl1, industrial qualification increased reliability absolute maximum ratings parameter units v ds drain-to-source voltage v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 70c continuous drain current, v gs @ 10v i d @ t c(bottom) = 25c continuous drain current, v gs @ 10v i d @ t c(bottom) = 100c continuous drain current, v gs @ 10v i d @ t c(top) = 25c continuous drain current, v gs @ 10v i d @ t c(top) = 100c continuous drain current, v gs @ 10v i dm pulsed drain current p d @t a = 25c power dissipation p d @ t c(top) = 25c power dissipation linear derating factor w/c t j operating junction and t stg storage temperature range w a c 4.1 34 21 7.8 4.9 v -55 to + 150 3.6 0.07 8.3 max. 5.1 63 20 200

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form quantity irfh5020trpbf pqfn 5mm x 6mm tape and reel 4000 irfh5020tr2pbf pqfn 5mm x 6mm tape and reel 400 eol notice #259 orderable part number package type standard pack note v ds 200 v r ds(on) max (@v gs = 10v) 55 m q g (typical) 36 nc r g (typical) 1.9 i d (@t c(bottom) = 25c) 34 a

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s d g thermal resistance parameter typ. max. units r 0. 0. ??? 15 c/w r ??? 35 r 10 ??? 21 static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv ds s drain-to-source breakdown voltage 200 ??? ??? v ? v dss / t j breakdown voltage temp. coefficient ??? 0.22 ??? v/c r ds(on) static drain-to-source on-resistance ??? 47 55 m v gs(th) gate threshold voltage 3.0 ??? 5.0 v v gs(th) gate threshold voltage coefficient ??? -12 ??? mv/c i dss drain-to-source leakage current ??? ??? 20 a ??? ??? 1.0 ma i gss gate-to-source forward leakage ??? ??? 100 gate-to-source reverse leakage ??? ??? -100 gfs forward transconductance 18 ??? ??? s q g total gate charge ??? 36 54 q gs1 pre-vth gate-to-source charge ??? 8.6 ??? q gs2 post-vth gate-to-source charge ??? 2.1 ??? q gd gate-to-drain charge ??? 11 ??? q godr gate charge overdrive ??? 14 ??? see fig.17 & 18 q sw switch charge (q gs2 + q gd ) ??? 13 ??? q oss output charge ??? 13 ??? nc r g gate resistance ??? 1.9 ??? t d(on) turn-on delay time ??? 9.3 ??? t r rise time ??? 7.7 ??? t d(off) turn-off delay time ??? 21 ??? t f fall time ??? 6.0 ??? c iss input capacitance ??? 2290 ??? c oss output capacitance ??? 120 ??? c rss reverse transfer capacitance ??? 33 ??? avalanche characteristics parameter units e as single pulse avalanche energy mj i ar avalanche current a diode characteristics parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage ??? ??? 1.3 v t rr reverse recovery time ??? 45 68 ns q rr reverse recovery charge ??? 459 689 nc t on forward turn-on time time is dominated by parasitic inductance a 7.5 ??? ??? 63 ??? ??? conditions v gs = 0v, i d = 250 a reference to 25c, i d = 1ma v gs = 10v, i d = 7.5a nc v ds = v gs , i d = 150 a na v ds = 200v, v gs = 0v v gs = 10v v ds = 200v, v gs = 0v, t j = 125c i d = 7.5a ? = 1.0mhz ??? typ. ??? r g =1.8 pf ns v gs = 0v v ds = 100v v ds = 100v t j = 25c, i f = 7.5a, v dd = 100v mosfet symbol v ds = 16v, v gs = 0v conditions see fig.15 max. 320 7.5 v dd = 100v, v gs = 10v v ds = 50v, i d = 7.5a i d = 7.5a v gs = 20v v gs = -20v di/dt = 500a/ s t j = 25c, i s = 7.5a, v gs = 0v showing the integral reverse p-n junction diode.
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fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 6. typical gate charge vs.gate-to-source voltage fig 5. typical capacitance vs.drain-to-source voltage 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.001 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s pulse width tj = 25c 4.5v vgs top 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.8v bottom 4.5v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s pulse width tj = 150c 4.5v vgs top 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.8v bottom 4.5v 3.0 4.0 5.0 6.0 7.0 v gs , gate-to-source voltage (v) 0.01 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) v ds = 50v 60 s pulse width t j = 25c t j = 150c 1 10 100 1000 v ds , drain-to-source voltage (v) 10 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.0 0.5 1.0 1.5 2.0 2.5 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 7.5a v gs = 10v 0 1020304050 q g total gate charge (nc) 0 4 8 12 16 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 160v v ds = 100v v ds = 40v i d = 7.5a
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fig 11. maximum effective transient thermal impedance, junction-to-case (top) fig 8. maximum safe operating area fig 9. maximum drain current vs. case (top) temperature fig 7. typical source-drain diode forward voltage fig 10. threshold voltage vs. temperature 0.2 0.4 0.6 0.8 1.0 v sd , source-to-drain voltage (v) 0.1 1 10 100 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 25 50 75 100 125 150 t a , ambient temperature (c) 0 2 4 6 8 i d , d r a i n c u r r e n t ( a ) -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 2.0 3.0 4.0 5.0 6.0 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 1.0a i d = 1.0ma i d = 500 a i d = 150 a 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 100 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 100 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc 1 10 100 1000 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1msec 10msec operation in this area limited by r ds (on) 100 sec

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fig 13. maximum avalanche energy vs. drain current fig 12. on-resistance vs. gate voltage 4 8 12 16 20 v gs , gate-to-source voltage (v) 40 80 120 160 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ) t j = 25c t j = 125c i d = 7.5a 25 50 75 100 125 150 starting t j , junction temperature (c) 0 200 400 600 800 1000 1200 1400 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 1.1a 1.6a bottom 7.5a fig 14. typical avalanche current vs. pulsewidth 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 0.01 0.1 1 10 100 a v a l a n c h e c u r r e n t ( a ) allowed avalanche current vs avalanche pulsewidth, tav, assuming ? j = 25c and tstart = 125c. allowed avalanche current vs avalanche pulsewidth, tav, assuming tj = 125c and tstart =25c (single pulse)
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fig 15.

for n-channel hexfet power mosfets fig 18a. gate charge test circuit fig 18b. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr

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p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period
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%% ? "#""&# 1k vcc dut 0 l s fig 16b. unclamped inductive waveforms fig 16a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 20v fig 17a. switching time test circuit fig 17b. switching time waveforms v gs v ds 90% 10% t d(on) t d(off) t r t f '( 1 ) $
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pqfn 5x6 outline "b" package details note: for the most current drawing please refer to ir website at: http://www .irf.com/package/ for more information on board mounting, including footprint and stencil recommendation, please refer to application note an-113 6: http://www.irf.com/technical-info/appnotes/an-1136.pdf for more information on package inspection techniques, please refer to application note an-1154: http://www.irf.com/technical-info/appnotes/an-1154.pdf pqfn 5x6 outline "g" package details
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note: for the most current drawing please refer to ir website at: http://www .irf.com/package/ pqfn 5x6 tape and reel bo w p 1 ao ko code tape dimensions reel dimensions quadrant assignments for pin 1 orientation in tape di mens i on des i gn to accommodate the component wi dth dimens ion des ign to accommodate the component lenght di mens i on des i gn to accommodate the component thi cknes s p i tch between s ucces s i ve cavi ty center s overall wi dth of the car ri er tape des cr ipt ion type package 5 x 6 pqf n note: all dimens ion are nominal di ameter reel qty wi dth reel (mm) ao (mm) bo (mm) ko (mm) p1 (mm) w quadrant pin 1 (i nch) w1 (mm) 13 4000 12.4 6.300 5.300 1.20 8.00 12 q1 pqfn 5x6 part marking xxxx xywwx xxxxx international rectifier logo part number (?4 or 5 digits?) marking code (per marking spec) assembly site code (per scop 200-002) date code pin 1 identifier lot code (eng mode - min last 4 digits of eati#) (prod mode - 4 digits of spn code)
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qualification standards can be found at international rectifier?s web site http://www .irf.com/product-info/reliability higher qualification ratings may be available should the user have such requirements. please contact your international rectifier sales representative for further information: http://www .irf.com/whoto-call/salesrep/ applicable version of jedec standard at the time of product release.
repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 11.3mh, r g = 25 , i as = 7.5a. pulse width 400 s; duty cycle 2%. r is measured at t j of approximately 90c. when mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of fr-4 material. ms l 1 (per je de c j-s t d-020d ??? ) rohs compliant yes pqfn 5mm x 6mm qualification information ? moisture sensitivity level qualification level industrial ?? (per je dec jes d47f ??? guidelines ) ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ revision history date comment ? updated ordering information to reflect the end-of-life (eol) of the mini-reel option (eol notice #259) on page1 ? corrected typo on breadown voltage temp. coefficient from "0.02v/c" to "0.22v/c" on page 2. ? . ? . ? . ? 10 . ? ? . ? . ? 1 . 101 01 01 101

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